Title :
High power frequency multipliers to 330 GHz
Author :
Alderman, Byron ; Henry, Manju ; Maestrini, Alain ; Grajal, Jesús ; Zimmerman, Ralph ; Sanghera, Hosh ; Wang, Hui ; Wilkinson, Paul ; Matheson, David
Author_Institution :
Rutherford Appleton Lab., Didcot, UK
Abstract :
The development of GaAs Schottky diodes using substrate transfer techniques is presented. It is argued that these devices are limited in power handling by the choice of substrate material. To mitigate against these thermal effects, the migration to CVD diamond substrates is a logical progression. A significant programme aimed at developing this technology is presented.
Keywords :
Schottky diodes; chemical vapour deposition; frequency multipliers; gallium arsenide; CVD diamond substrate; GaAs; Schottky diode; frequency 330 GHz; high power frequency multiplier; power handling; substrate material; substrate transfer; thermal effect; Europe; Gallium arsenide; Microwave radiometry; Power amplifiers; Schottky diodes; Substrates; Varactors;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
