DocumentCode
530908
Title
High power frequency multipliers to 330 GHz
Author
Alderman, Byron ; Henry, Manju ; Maestrini, Alain ; Grajal, Jesús ; Zimmerman, Ralph ; Sanghera, Hosh ; Wang, Hui ; Wilkinson, Paul ; Matheson, David
Author_Institution
Rutherford Appleton Lab., Didcot, UK
fYear
2010
fDate
27-28 Sept. 2010
Firstpage
232
Lastpage
233
Abstract
The development of GaAs Schottky diodes using substrate transfer techniques is presented. It is argued that these devices are limited in power handling by the choice of substrate material. To mitigate against these thermal effects, the migration to CVD diamond substrates is a logical progression. A significant programme aimed at developing this technology is presented.
Keywords
Schottky diodes; chemical vapour deposition; frequency multipliers; gallium arsenide; CVD diamond substrate; GaAs; Schottky diode; frequency 330 GHz; high power frequency multiplier; power handling; substrate material; substrate transfer; thermal effect; Europe; Gallium arsenide; Microwave radiometry; Power amplifiers; Schottky diodes; Substrates; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7231-4
Type
conf
Filename
5613682
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