DocumentCode :
530917
Title :
Highly efficient harmonically tuned broadband GaN power amplifier
Author :
Tanany, Ahmed Al ; Gruner, Daniel ; Sayed, Ahmed ; Boeck, Georg
Author_Institution :
Microwave Eng. Lab., Berlin Univ. of Technol., Berlin, Germany
fYear :
2010
fDate :
27-28 Sept. 2010
Firstpage :
5
Lastpage :
8
Abstract :
The influence of the harmonic impedances on the power amplifier performance is presented across a wide bandwidth. Based on this method, a set of impedances for the first, second and third harmonics across the band was found which do not affect output power (POut) and power added efficiency (PAE). At the 3 dB compression point, the measured Pout is 40 dBm ± 1.5 dB, and the PAE is between 58.7 %-78.0 % across a bandwidth of 1.5 GHz-2.75 GHz (60 % bandwidth). A linearity measurement was done by sweeping the drain supply voltage, gate bias voltage and injecting a WCDMA drive signal to find the best linearity without affecting the performance. A linearity of -36 dBc at 8.5 dB back-off power from the 3 dB compression point of Pout was found at 2.15 GHz.
Keywords :
III-V semiconductors; circuit tuning; gallium compounds; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; WCDMA drive signal; bandwidth 1.5 GHz to 2.75 GHz; drain supply voltage; frequency 2.15 GHz; gate bias voltage; harmonic impedances; harmonically tuned broadband power amplifier; power added efficiency; Broadband amplifiers; Harmonic analysis; Impedance; Linearity; Power amplifiers; Power generation; Power system harmonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
Type :
conf
Filename :
5613696
Link To Document :
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