A broadband, efficient, overdriven class-J RF power amplifier for burst mode operation

Author

Parveg, Dristy Rahul ; Singerl, Peter ; Wiesbauer, Andreas ; Nemati, Hossein Mashad ; Fager, Christian

Author_Institution

Infineon Technol. Austria AG, Villach, Austria

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

424

Lastpage

427

Abstract

This paper describes a highly efficient, burst mode transmitter architecture. For this operation, a broadband, Si-LDMOS overdriven class-J RF power amplifier (RFPA) is designed. By implementing the burst mode operation, an efficiency of 42% was measured when the designed amplifier was driven by a discrete multi tone (DMT) signal having 10 dB peak to average power ratio (PAPR). Moreover, an overall bandwidth of 230 MHz around the frequency of 1 GHz was achieved and a maximum power added efficiency (PAE) of 77% was recorded with 13 W output power along with a gain of 15 dB for a continuous wave (CW) signal.

Keywords

MOS integrated circuits; UHF power amplifiers; elemental semiconductors; silicon; DMT signal; PAPR; RFPA; Si; Si-LDMOS; bandwidth 230 MHz; burst mode transmitter architecture; class-J RF power amplifier; continuous wave signal; discrete multitone signal; frequency 1 GHz; gain 15 dB; peak to average power ratio; power 13 W; power added efficiency; Bandwidth; Frequency measurement; Gain; Harmonic analysis; Power generation; Power measurement; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613703