Title :
A DC-4 GHz 270Ω differential SiGe low-noise amplifier for cryogenic applications
Author :
Bardin, Joseph C. ; Weinreb, Sander
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The design and measurement of a differential DC-4 GHz low-noise amplifier that is impedance matched to 270 Ω is presented in this paper. At room temperature, the amplifier has a measured gain of 29 dB with a 3 dB bandwidth of 4 GHz. To measure the noise temperature of the amplifier at cryogenic temperatures, an extension of the cold attenuator method was employed. The measured noise was found to be better than 10 K from 1-3 GHz at 24 K physical temperature. To the authors´ knowledge, this is the lowest reported noise for a differential amplifier that is impedance matched to 270 Ω.
Keywords :
Ge-Si alloys; attenuators; cryogenic electronics; differential amplifiers; impedance matching; low noise amplifiers; SiGe; bandwidth 4 GHz; cold attenuator; cryogenic application; cryogenic temperature; differential DC low-noise amplifier; differential amplifier; frequency 4 GHz; gain 29 dB; impedance matching; noise temperature; resistance 270 ohm; Attenuators; Cryogenics; Impedance; Noise; Noise measurement; Temperature;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
