Classification of trapping characteristic in HEMTs

Trapping phenomenon is classified through its manifestation in the I_DS-V_DS and I_DS-V_GS characteristics using a new trapping model based on SRH theory. The classification is based on the nature of the trap-centers (acceptor/donor traps), their exact position (bulk/surface region) and their potential dependency on terminal-potentials. Different models are proposed for each position. The proposed simulation based classification predicts several kink effect and knee walkout behaviors in the IV-characteristic as a result of the presence of traps in the transistor.