DocumentCode :
530925
Title :
Electrothermal and large-signal modeling of switchmode AlGaN/GaN HEMTs
Author :
Caller, G. ; Faraj, J. ; Rafei, A.E. ; Jardel, O. ; Jacquet, J.C. ; Teyssier, J.P. ; Morvan, E. ; Piotrowicz, S. ; Quéré, R.
Author_Institution :
XLIM C2S2, CNRS, Brive-la-Gaillarde, France
fYear :
2010
fDate :
27-28 Sept. 2010
Firstpage :
266
Lastpage :
269
Abstract :
We report in this paper on the improvement of the model presented in [1] for AlGaN/GaN HEMT especially focused on switch applications. We developed a new method to measure accurately the ON resistance Ron versus the junction temperature, and will compare here our thermal model to the measurements realized in pulsed I(V) and in [S]-parameters. We also focused on the influence of drain and gate impedances and biases for large signal switch applications, and performed extensive measurements and simulations comparisons to demonstrate the good accuracy of the proposed electrothermal model.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; switches; thermal analysis; wide band gap semiconductors; AlGaN-GaN; ON resistance; S-parameter; electrothermal modeling; junction temperature; large signal modeling; pulsed current-voltage characteristics; switch application; switchmode HEMT; Current measurement; Power measurement; Pulse measurements; Solid modeling; Switches; Temperature measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
Type :
conf
Filename :
5613706
Link To Document :
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