High performance InSb QWFETs for low power dissipation millimetre wave applications

Author

Ashley, T. ; Emeny, M.T. ; Hayes, D.G. ; Hilton, K.P. ; Jefferies, R. ; Maclean, J.O. ; Smith, S.J. ; Tang, W. H A ; Webber, P.J. ; Williams, G.M.

Author_Institution

QinetiQ, Malvern Technol. Centre, Malvern, UK

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

158

Lastpage

161

Abstract

Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (f_T) of 305 GHz and power gain cut-off frequency (f_max) of 480 GHz at V_DS of only 0.5 V. Outline design confirms the potential for a 3 stage low noise amplifiers operating at more than 200 GHz, for applications such as integrated passive millimetre wave imaging.

Keywords

electron mobility; field effect transistors; indium compounds; millimetre wave devices; quantum well devices; N-channel quantum well FET; QWFET; conventional semiconductor; electron mobility; indium antimonide; low power dissipation millimetre wave applications; saturation velocity; Current measurement; Integrated circuit modeling; Logic gates; Noise; Noise measurement; Scattering parameters; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613708