Title :
High performance InSb QWFETs for low power dissipation millimetre wave applications
Author :
Ashley, T. ; Emeny, M.T. ; Hayes, D.G. ; Hilton, K.P. ; Jefferies, R. ; Maclean, J.O. ; Smith, S.J. ; Tang, W. H A ; Webber, P.J. ; Williams, G.M.
Author_Institution :
QinetiQ, Malvern Technol. Centre, Malvern, UK
Abstract :
Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (fT) of 305 GHz and power gain cut-off frequency (fmax) of 480 GHz at VDS of only 0.5 V. Outline design confirms the potential for a 3 stage low noise amplifiers operating at more than 200 GHz, for applications such as integrated passive millimetre wave imaging.
Keywords :
electron mobility; field effect transistors; indium compounds; millimetre wave devices; quantum well devices; N-channel quantum well FET; QWFET; conventional semiconductor; electron mobility; indium antimonide; low power dissipation millimetre wave applications; saturation velocity; Current measurement; Integrated circuit modeling; Logic gates; Noise; Noise measurement; Scattering parameters; Transistors;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
