A non linear power HEMT model operating in multi-bias conditions

This paper presents a non linear model of HEMT device which operate in multi-bias conditions, that is to say in class-AB, class-B, class-C, class-D and class-S. The model was derived from pulsed I(V), pulsed S parameters and large signals measurements. The aim is to provide to the designers a single model that can be used whatever the operating class, whatever the application referred. It should be underlined that this model is able to describe third quadrant phenomena (when driving the transistor in the negative drain voltage). The target was to make this model reliable when the transistor works in class-S operating conditions. For this purpose, the model was validated on different HEMT devices and for multi-bias conditions.