Title :
A non linear power HEMT model operating in multi-bias conditions
Author :
Charbonniaud, C. ; Xiong, A. ; Dellier, S. ; Jardel, O. ; Quéré, R.
Author_Institution :
AMCAD Eng., Limoges, France
Abstract :
This paper presents a non linear model of HEMT device which operate in multi-bias conditions, that is to say in class-AB, class-B, class-C, class-D and class-S. The model was derived from pulsed I(V), pulsed S parameters and large signals measurements. The aim is to provide to the designers a single model that can be used whatever the operating class, whatever the application referred. It should be underlined that this model is able to describe third quadrant phenomena (when driving the transistor in the negative drain voltage). The target was to make this model reliable when the transistor works in class-S operating conditions. For this purpose, the model was validated on different HEMT devices and for multi-bias conditions.
Keywords :
high electron mobility transistors; semiconductor device models; multi-bias conditions; negative drain voltage; nonlinear power HEMT model; pulsed S parameters; third quadrant phenomena; Gallium nitride; HEMTs; Integrated circuit modeling; Load modeling; Mathematical model; Microwave amplifiers; Solid modeling;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4