High frequency performance of Tellurium σ-doped AlSb/InAs HEMTs at low power supply

Author

Olivier, Aurélien ; Noudeviwa, Albert ; Wichmann, Nicolas ; Roelens, Yannick ; Desplanque, Ludovic ; Danneville, François ; Dambrine, Gilles ; Wallart, Xavier ; Bollaert, Sylvain

Author_Institution

IEMN, Univ. of Lille, Villeneuve-d´´Ascq, France

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

162

Lastpage

165

Abstract

In this paper, we present a set of characteristics (DC, f_t, f_max, extrinsic and intrinsic parameters) of a 120 nm gate length InAs/AlSb high electron mobility transistor (HEMT) with a doping plane of Tellurium (Te) operating at room temperature (RT) and low power conditions. A cut-off frequency f_t equal to 103 GHz has been achieved at 100 mV trough the reduction of gate-channel distance and the change of dopant type. It opens up the possibility to develop an ultra low power electronics, featuring excellent high frequency performances below 100 mV DC biasing.

Keywords

III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; low-power electronics; tellurium; AlSb:Te-InAs; DC biasing; cut-off frequency; doping plane; extrinsic parameters; gate length; gate-channel distance; high electron mobility transistor; high frequency performance; intrinsic parameters; low power supply; size 120 nm; tellurium δ-doped HEMT; temperature 293 K to 298 K; ultralow power electronics; voltage 100 mV; Current measurement; HEMTs; Logic gates; Low power electronics; MODFETs; Silicon; Temperature measurement; III-V semiconductors; InAs/AISb; antimonide-based compound semiconductor; high electron mobility transistors (HEMT); low-power electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613713