High-isolation low-loss SP7T pHEMT switch suitable for antenna switch modules

Author

Yore, Michael D. ; Nevers, Corey A. ; Cortese, Philippe

Author_Institution

TriQuint Semicond., Florida USA, Apopka, FL, USA

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

69

Lastpage

72

Abstract

In this paper the design, fabrication and measurement of a high performance SP7T GaAs pHEMT switch for cellular phone applications is discussed. The antenna switch design uses a state of the art E/D-mode pHEMT process with an Ron*Coff Figure of Merit of 145 Ohm-fF. Excellent broadband insertion loss measurements across all cellular bands are less than 0.5dB, isolations are greater than 32dB while maintaining minimum harmonic distortion levels. Matching the switch to specific bands yielded insertion losses of 0.35dB at 0.915 GHz and 0.4dB at 1.95 GHz.

Keywords

III-V semiconductors; antenna accessories; gallium arsenide; mobile handsets; power HEMT; 145 Ohm-fF merit; Ron*Coff Figure; antenna switch design; antenna switch modules; broadband insertion loss measurements; cellular bands; cellular phone applications; frequency 0.915 GHz to 1.95 GHz; high-isolation low-loss SP7T pHEMT switch; minimum harmonic distortion levels; noise figure 0.35 dB to 0.4 dB; Insertion loss; Logic gates; Loss measurement; Optical switches; PHEMTs; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613717