DocumentCode :
530944
Title :
Performance assessment of GaN HEMT technologies for power limiter and switching applications
Author :
Pantellini, Alessio ; Peroni, Marco ; Nanni, Antonio ; Bettidi, Andrea
Author_Institution :
SELEX Sist. Integran SpA, Rome, Italy
fYear :
2010
fDate :
27-28 Sept. 2010
Firstpage :
45
Lastpage :
48
Abstract :
In this work, a systematic study on GaN HEMT devices for Switching and Power Limitation is presented. Various manufacturing approaches are considered, all fully compliant for monolithic integration with HPA and LNA circuits. A set of devices have been used to compare various configuration options, including different layouts, single or multiple Gate, or the adoption of Schottky or Metal-Insulator-Semiconductor (MIS) Gate junctions. Devices performances under high input power signal @3GHz have been compared, showing that MIS Gate switch devices in series configuration can handle in ON-state 80W/mm power for ldB insertion loss compression, and for double Gate topology higher power handling can be obtained in OFF-state (>40dBm for +1dB isolation compression). GaN HEMT switches in shunt configuration have been studied for Power signal protection application, evidencing that single MIS Gate devices with WG=900μm provides low insertion loss (<;0.1dB) and effective power limitation (-5dB @ PIN=40dBm), associated with 23dB ON-state isolation.
Keywords :
MIS devices; gallium compounds; high electron mobility transistors; low noise amplifiers; microwave limiters; network topology; GaN; HEMT technologies; LNA circuits; MIS gate switch devices; Schottky gate junctions; double gate topology; frequency 3 GHz; high power amplifiers; loss 1 dB; metal-insulator-semiconductor gate junctions; monolithic integration; multiple gate; power limiter; power signal protection application; single gate; switching applications; Gallium nitride; HEMTs; Insertion loss; Logic gates; Performance evaluation; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
Type :
conf
Filename :
5613732
Link To Document :
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