Title :
A 10 GHz cut-off frequency transistor based on epitaxial graphene nano ribbon
Author :
Meng, Nan ; Fernandez, J. Ferrer ; Vignaud, Dominique ; Dambrine, Gilles ; Happy, Henri
Author_Institution :
Inst. d´´Electron., de Microelectron. et de Nanotechnol., CNRS, Villeneuve-d´´Ascq, France
Abstract :
High frequency characterization of epitaxial-grown graphene nano ribbon based field-effect transistor (GNRFET) was investigated. The few layers graphene were synthesized by thermal decomposition of Si-faced silicon carbide. The intrinsic current gain cut-off frequency of 10 GHz was obtained. A small signal equivalent circuit model of this device was proposed which open a potentiality to the modelling of GNR based HF electronics.
Keywords :
epitaxial growth; equivalent circuits; field effect transistors; graphene; nanostructured materials; pyrolysis; silicon compounds; GNRFET; cut-off frequency transistor; epitaxial graphene nano ribbon; epitaxial-grown graphene nano ribbon; field-effect transistor; frequency 10 GHz; frequency characterization; intrinsic current gain cut-off frequency; signal equivalent circuit model; silicon carbide; thermal decomposition; Cutoff frequency; Gain; Logic gates; Silicon carbide; Substrates; Transistors;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
