DocumentCode
530947
Title
Integrated active loop sensor in SiGe technology for near-field scanning
Author
Uddin, Nasir ; Awny, Ahmed ; Thiede, Andreas
Author_Institution
Dept. of High Freq. Electron., Univ. of Paderborn, Paderborn, Germany
fYear
2010
fDate
27-28 Sept. 2010
Firstpage
94
Lastpage
97
Abstract
This paper presents an integrated active loop sensor designed in IHP 0.25 μm SiGe:C HBT technology for near-field scanning of printed circuit boards (PCBs) as well as large scale integrated (LSI) circuits. Electromagnetic (EM) field simulation as well as on-wafer measurement results are presented for passive loop. A wideband amplifier with 23 dB gain and 10 GHz bandwidth is designed and measurement results are presented. Finally on-wafer measurement results for the integrated active loop sensor are presented.
Keywords
heterojunction bipolar transistors; large scale integration; printed circuits; sensors; IHP 0.25 μm SiGe:C HBT technology; SiGe; SiGe technology; electromagnetic field simulation; integrated active loop sensor; large scale integrated circuits; near-field scanning; on-wafer measurement; printed circuit boards; Gain; Impedance; Magnetic field measurement; Magnetic fields; Probes; Semiconductor device measurement; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7231-4
Type
conf
Filename
5613735
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