Title :
Determination of suitable mHEMT transistor dimensioning for power amplification at 210 GHz by comprehensive measurements
Author :
Diebold, S. ; Kallfass, I. ; Massler, H. ; Leuther, A. ; Tessmann, A. ; Pahl, P. ; Koch, S. ; Siegel, M. ; Ambacher, O.
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys. (IAF), Freiburg, Germany
Abstract :
The properties of various mHEMT technologies and their advantages for millimeter-wave (mmW) power amplification are presented. An experimental determination of the most suitable transistor technology (i.e. gate-length), transistor size (i.e. number of gate-fingers and gate-width) and transistor bias is taken. The advantages of the different technologies are pointed out. The most suitable combination of gate-length, number of fingers, gate-width and bias for obtaining maximum gain, maximum output power and maximum power added efficiency at a given frequency of 210 GHz is determined.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; frequency 210 GHz; gate-fingers; gate-length; gate-width; mHEMT technologies; mHEMT transistor dimensioning; millimeter-wave power amplification; transistor bias; transistor size; transistor technology; Gain; Logic gates; Power generation; Power measurement; Transmission line measurements; mHEMTs; MMICs; mHEMT; millimeter-wave; power amplifier; technology comparison;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
