Performances of AlInN/GaN HEMTs for power applications at microwave frequencies

Author

Jardel, O. ; Callet, G. ; Dufraisse, J. ; Sarazin, N. ; Chartier, E. ; Reveyrand, T. ; Oualli, M. ; Lancereau, D. ; Di Forte Poisson, M.A. ; Piotrowicz, S. ; Morvan, E. ; Delage, S.L.

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

49

Lastpage

52

Abstract

We report a comparative study on AlInN/GaN HEMTs on SiC substrates having four different processes and epitaxies. The outstanding performances of such devices will be explained thanks to intensive characterizations: pulsed-IV, [S]-parameters and load-pull at several frequencies from S to Ku bands. The measured transistors with 250nm gate lengths from different wafers delivered in cw: 10.8 W/mm with 60 % associated PAE at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10,24 GHz, and 4.2 W/mm with 43 % associated PAE at 18 GHz.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; silicon compounds; wide band gap semiconductors; AlInN-GaN; S-parameters; SiC; frequency 10.24 GHz; frequency 18 GHz; frequency 3.5 GHz; high electron mobility transistors; load-pull characterization; power added efficiency; pulsed-IV parameters; size 250 nm; Current measurement; Gallium nitride; HEMTs; Logic gates; MODFETs; Performance evaluation; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613738