DocumentCode
530955
Title
Output power density higher than 1 W/mm at 4 GHz thanks to an original silicon LDEMOS transistor layout
Author
Ducatteau, D. ; Fournier, D. ; Bekangba, G. ; Chevalier, P. ; Gaquière, C.
Author_Institution
IEMN, Villeneuve d´´Ascq, France
fYear
2010
fDate
27-28 Sept. 2010
Firstpage
150
Lastpage
153
Abstract
This paper describes an original silicon nLDEMOS transistor layout which allows improving the microwave power performances. Results of DC, small and large signal measurements are presented and compared between the standard and the original layouts. Regarding the power performances (power density, power added efficiency, power gain), this confrontation shows clearly the interest in using the original layout. At 4 GHz, a 1 W/mm power density was obtained with a drain-to-source voltage of 10 V.
Keywords
MOSFET; microwave field effect transistors; LDEMOS transistor layout; Si; frequency 4 GHz; large signal measurements; microwave power performance; output power density; power added efficiency; power gain; small signal measurements; voltage 10 V; Layout; Logic gates; Power generation; Power measurement; Radio frequency; Transistors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7231-4
Type
conf
Filename
5613745
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