DocumentCode
530958
Title
GaN power MMICs for X-Band T/R modules
Author
Jardel, O. ; Mazeau, J. ; Piotrowicz, S. ; Caban-Chastas, D. ; Chartier, E. ; Morvan, E. ; Duême, P. ; Mancuso, Y. ; Delage, S.L.
Author_Institution
III-V Lab., Alcatel Thales, Marcoussis, France
fYear
2010
fDate
27-28 Sept. 2010
Firstpage
17
Lastpage
20
Abstract
This paper presents the development of power MMICs in GaN HEMT technology for X-Band T/R modules. We will focus here specifically on the transmit path, which contains the high power amplifier and its power driver. A step by step description of the tasks in order to design this channel will be done, beginning from a short overview of the epitaxial process to the presentation of its measured and simulated power performances.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium compounds; receivers; transmitters; wide band gap semiconductors; GaN; HEMT integrated circuits; X-band T/R modules; high power amplifier; power MMIC; power driver; transmit path; Driver circuits; Gain; Gallium nitride; Integrated circuit modeling; Power generation; Power measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7231-4
Type
conf
Filename
5613748
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