DocumentCode
530962
Title
GaAs MMIC integrated diode limiters
Author
Billström, Niklas ; Nilsson, Mattias ; Estmer, Krister
Author_Institution
Electron. Defence Syst., Saab AB, Gothenburg, Sweden
fYear
2010
fDate
27-28 Sept. 2010
Firstpage
126
Lastpage
129
Abstract
The main scope of the paper is a basic investigation/characterisation of monolithically integrated GaAs MMIC limiters based on standard Schottky diodes. The paper brings up the front-door vulnerability and protection of microwave sensor systems in terms of front-door coupled electric overstress (EOS). Special attention is put into active electronically scanned antennas (AESA), i.e. active phased arrays. A comparison is made, in terms of front-door vulnerability of traditional radar/EW systems versus wide-band multi-role AESA systems. The foreseen main protection technologies are listed and compared where integrated GaAs diode limiters offer some important advantages in terms of cost, multi-functionality and commercial availability. A relatively comprehensive evaluation of GaAs diode limiters has been performed and the main results are presented. Furthermore, two designed and measured low noise GaAs MMIC circuits utilizing integrated diode limiters are presented.
Keywords
III-V semiconductors; MMIC; Schottky diodes; gallium arsenide; microwave limiters; MMIC integrated diode limiters; Schottky diodes; active electronically scanned antennas; coupled electric overstress; microwave sensor systems; Gallium arsenide; Loss measurement; MMICs; Noise; PIN photodiodes; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7231-4
Type
conf
Filename
5613752
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