A low phase-noise SiGe Colpitts VCO with wide tuning range for UWB applications

Author

Esswein, Alexander ; Dehm-Andone, Gunther ; Weigel, Robert ; Aleksieieva, Anna ; Vossiek, Martin

Author_Institution

Inst. for Electron. Eng., Friedrich-Alexander Univ. of Erlangen-Nuremberg, Erlangen, Germany

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

452

Lastpage

455

Abstract

An integrated differential common collector Colpitts VCO with a wide tuning range is presented in this paper. The circuit was designed and fabricated in the IHP Technologies SGB25V 250 nm SiGe:C BiCMOS process. It provides a superior low phase noise performance of -115 dBc/Hz covering the frequency range of 6.7 to 8.7 GHz for UWB pulsed frequency modulated secondary radar application. An additional common collector output buffer was implemented as well. The circuit provides an overall output power of -10 dBm single-ended with a power dissipation of 47 mW including the on-chip buffer. This paper also shows the modifications and improvements done at the mmwave topology to reduce size and to improve the tuning range.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; circuit tuning; millimetre wave radar; phase noise; pulse frequency modulation; ultra wideband radar; voltage-controlled oscillators; BiCMOS process; SiGe; UWB pulsed frequency modulated secondary radar application; circuit design; frequency 6.7 GHz to 8.7 GHz; integrated differential common collector Colpitts VCO; low phase-noise; mmwave topology; on-chip buffer; output buffer; power 47 mW; power dissipation; wide tuning range; Frequency modulation; Phase noise; Power generation; Topology; Tuning; Voltage-controlled oscillators; Analog integrated circuits; Phase noise; Ultra wideband; Voltage controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613762