A broadband 20- to 40 GHz linear driver amplifier MMIC in surface mount QFN 3×3-mm package

Author

Bessemoulin, A.

Author_Institution

Mimix Broadband Inc., Houston, TX, USA

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

310

Lastpage

312

Abstract

The performance of a compact broadband driver amplifier MMIC in SMD package is presented. The amplifier is fabricated with a commercially available 6-inch 0.15-μm low-noise GaAs PHEMT technology, and packaged in a standard surface mount QFN 3×3 mm plastic package. While occupying a chip area of only 1.6 mm², at 4V and 300 mA, this packaged 4-stage amplifier achieves a small signal gain of more than 26 dB over the 18- to 40 GHz frequency band, with +20-dBm output power in saturation, and excellent intermodulation performance, namely 30-dBm OIP₃. This broadband performance makes this amplifier well suited to cover multiple Point-to-point radio telecommunication bands.

Keywords

III-V semiconductors; MMIC amplifiers; gallium arsenide; high electron mobility transistors; millimetre wave amplifiers; radio links; surface mount technology; wideband amplifiers; GaAs; MMIC; broadband linear driver amplifier; frequency 20 GHz to 40 GHz; intermodulation; low-noise PHEMT; plastic package; point-to-point radio telecommunication bands; size 0.15 mum; surface mount QFN package; Broadband amplifiers; Frequency measurement; Gain; Gallium arsenide; MMICs; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613774