• DocumentCode
    531061
  • Title

    Doherty power amplifier design employing direct input power dividing for base station applications

  • Author

    Kim, Jungjoon ; Moon, Junghwan ; Kang, Daehyun ; Jee, Seunghoon ; Woo, Young Yun ; Kim, Bumman

  • Author_Institution
    Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
  • fYear
    2010
  • fDate
    28-30 Sept. 2010
  • Firstpage
    866
  • Lastpage
    869
  • Abstract
    For base station applications, -3 dB hybrid coupler has been used for input power dividing stage of Doherty power amplifier (PA). The input direct dividing technique has only been applied for handset applications, because the coupler occupies a large size on a chip. However, this technique provides advantages on power gain and efficiency for base station applications, also. In this paper, we have proposed a design procedure of Doherty PA applying the input direct dividing technique. Implemented Doherty PA using two Cree CGH40045 GaN HEMT achieves excellent drain efficiency of 51.2% at 41 dBm output power for long term evolution (LTE) 1FA signal at 2.14-GHz. Moreover, the Doherty PA could be linearized to -45 dBc using the digital feedback predistortion technique.
  • Keywords
    HEMT circuits; III-V semiconductors; coupled circuits; distortion; gallium compounds; power amplifiers; wide band gap semiconductors; Cree CGH40045 HEMT; Doherty power amplifier design; GaN; base station application; digital feedback predistortion technique; direct input power dividing; frequency 2.14 GHz; handset application; hybrid coupler; Base stations; Gain; Impedance; Modulation; Peak to average power ratio; Power amplifiers; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5614798