Non-quasi-static modeling of the intrinsic Y22 for GaN, Si, and GaAs mm-wave FET technologies

The extraction of accurate transistor models is essential for a reliable and efficient design of transmit/receive modules, which in turn is a keystone for the development of active electronically scanned array radars. The present paper is aimed at analysing the implementation of non-quasi-static effects for advanced millimeter-wave FET models. The non-quasi-static phenomena can be neglected at few GHz but their contributions become more and more dominant by increasing the operating frequencies. In particular, this study is focused on the investigation of the non-quasi-static effects for modeling the intrinsic short circuit output admittance for FETs based on gallium nitride, silicon, and gallium arsenide technologies. Different model solutions are carefully compared and analysed in detail.