DocumentCode :
531332
Title :
GaN Doherty high power amplifiers at 900 MHz, 2.1 GHz, and 2.6 GHz
Author :
Burns, Christopher T. ; Anderson, Bobby ; LeFevre, Michael D. ; Runton, David W.
Author_Institution :
RF Micro Devices, Chandler, AZ, USA
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
874
Lastpage :
877
Abstract :
The performance of several Doherty power amplifiers (DPA) is presented. The power amplifiers make use of new input-prematched transistors based on GaN HFETs fabricated with RFMD´s GaN1C process technology. The DPAs operate in several frequency bands including 860-900 MHz, 2.1-2.17 GHz, and 2.5-2.7 GHz. The DPAs were characterized with a 3GPP W-CDMA signal with 7.5 dB PAR. At 875-890 MHz, a DPA achieves 58.0 dBm peak saturated power, while showing 50.4% drain efficiency and -50 dBc ACPR at 50.3 dBm average power. At 2.14 GHz, a DPA achieves greater than 56.7 dBm peak saturated power, while showing 48% drain efficiency and -55 dBc ACPR at 49.1 dBm average power. At 2.6 GHz, a DPA achieves greater than 52.8 dBm peak saturated power, while showing 47.5% drain efficiency and -50 dBc ACPR at 45 dBm average power.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; Doherty high power amplifiers; GaN; HFET; RFMD GaNIC process technology; frequency 2.1 GHz; frequency 2.6 GHz; frequency 900 MHz; input-prematched transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616135
Link To Document :
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