Balanced BPFs implemented using IPD (integrated passive devices) technology

Author

Yook, Jong-Min ; Yu, Je-In ; Park, Jong-Chul ; Kwon, Young-Se

Author_Institution

Packaging Res. Center, Korea Electron. Technol. Inst. (KETI), Seongnam, South Korea

fYear

2010

fDate

28-30 Sept. 2010

Firstpage

429

Lastpage

432

Abstract

Perfectly balanced BPFs are realized in this paper through IPD technology. To create a symmetric structure, two three-stage coupled BPFs are combined. The resonators of the filter are made with mircostrip-line inductors and MIM capacitors. SAAO (Selectively Anodized Aluminum Oxide) and HRS (High Resistivity Silicon) substrates are used to make the filters. All of the fabricated balanced BPFs have a maximum in-band PI (Phase Imbalance) within 0.5° The maximum in-band MD (Magnitude Difference) is less than 0.25 dB. The fabricated filters are very small, at 1.5 × 1.36 mm² (SAAO) and 1.38 × 1.28 mm² (HRS), and their IL (Insertion Loss) values are 2.57 dB and 1.95 dB at 2.45 GHz, respectively.

Keywords

aluminium compounds; microstrip lines; passive filters; resonator filters; AlO; HRS; IPD technology; MIM capacitors; SAAO; Si; balanced BPF; fabricated filters; frequency 2.45 GHz; high resistivity silicon substrates; integrated passive devices technology; magnitude difference; mircostrip-line inductors; phase imbalance; resonators; selectively anodized aluminum oxide; symmetric structure; Anodized Aluminum Oxide; Balanced BPF; Coupled Resonator Filter; IPD; Integrated Passive Devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7232-1

Type

conf

Filename

5616249