LNA and mixer for 122 GHz receiver in SiGe technology

Author

Winkler, W. ; Debski, W. ; Schmalz, K. ; Borngräber, J. ; Scheytt, Ch

Author_Institution

Silicon Radar GmbH, Frankfurt (Oder), Germany

fYear

2010

fDate

28-30 Sept. 2010

Firstpage

529

Lastpage

532

Abstract

The paper presents 122 GHz receiver circuits including a low-noise-amplifier (LNA) and a mixer fabricated in SiGe BiCMOS technology. The design takes advantage of a novel transmission line structure with thick metal ground-shield on top of the MMIC. The LNA utilizes a two-stage cascode topology and the mixer is a Gilbert cell with additional current injection in the RF-path. Measurements of the receiver frontend show a gain of 12 dB and a noise figure below 13 dB at 121-129 GHz. The power consumption is 165 mW from a 3.5 Volt supply. The receiver frontend is intended for the use in ISM-band radar and communication systems, wide-band communication systems and in radar imaging systems.

Keywords

BiCMOS integrated circuits; low noise amplifiers; mixers (circuits); monolithic integrated circuits; radar imaging; receivers; transmission lines; Gilbert cell; ISM-band radar systems; LNA; RF-path; SiGe BiCMOS technology; frequency 122 GHz; low-noise-amplifier; mixer; power consumption; radar imaging systems; receiver circuits; thick metal ground-shield; transmission line structure; two-stage cascode topology; wide-band communication systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7232-1

Type

conf

Filename

5616270