DocumentCode :
531454
Title :
Multi-physics modeling of electro-mechanical oscillators: Comparative analysis of Colpitts and Cross-Coupled architectures
Author :
Wane, S. ; Philippe, P. ; El-Kassir, B. ; Tesson, O. ; Praamsma, L. ; Giard, O. ; Chapman, M. ; Minchin, O. ; Gamand, P.
Author_Institution :
NXP-Semicond., France
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
620
Lastpage :
623
Abstract :
This paper discusses necessity of multi-physics analysis methodology for electro-mechanical oscillators. Electro-mechanical coupling module is introduced to account for power-energy conversion between electro-mechanical resonators and oscillator active-cores. The proposed methodology is successfully applied to the design of low power and low noise integrated crystal oscillators using NXP-Semiconductors advanced BiCMOS QUBIC technology solutions. A phase noise better than -154dBc/Hz at 10KHz with noise supply rejection better than -65dB is experimentally demonstrated. Comparative analysis of Colpitts and Cross-Coupled oscillator architectures is proposed. Impact of CML and MOS Amplitude-Level-Control (ALC) regulation schemes on phase-noise performances are investigated. Correlations of experimental results with Cadence Spectre simulation results and Berkeley Design Automation solutions show satisfactory agreement, and underline importance of large-signal assumptions together with proper stability analysis.
Keywords :
BiCMOS integrated circuits; crystal oscillators; BiCMOS QUBIC technology; Colpitts architectures; NXP-semiconductors; amplitude-level-control regulation; comparative analysis; cross-coupled architectures; electro-mechanical oscillators; low noise integrated crystal oscillators; low power integrated crystal oscillators; multi-physics modeling; stability analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616294
Link To Document :
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