• DocumentCode
    531477
  • Title

    Novel broadband through silicon via interconnect for three dimensional CPW transition

  • Author

    Cho, Young Seek ; Franklin, Rhonda R.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
  • fYear
    2010
  • fDate
    28-30 Sept. 2010
  • Firstpage
    113
  • Lastpage
    116
  • Abstract
    A novel broadband through silicon via (TSV) interconnect is proposed for three dimensional coplanar waveguide (CPW) transition. Simple truncation of CPW ground plane in the transition region to the via size improves return and insertion loss of the three dimensional CPW transition. The characteristic impedance in the TSV interconnect is evaluated and optimum position of GND via hole is found by three dimensional electromagnetic simulations. Performance of the back-to-back novel TSV interconnect is characterized by simulations and measurements. The return loss of the novel TSV interconnect is below 20 dB over 88 % of a 50 GHz bandwidth. The return loss is improved by 10 dB and the insertion loss is well behaved response up to 25 GHz and better than 0.2 dB/mm across the 50 GHz band.
  • Keywords
    coplanar waveguides; integrated circuit interconnections; three-dimensional integrated circuits; CPW ground plane; CPW transition; GND; back-to-back novel TSV interconnect; characteristic impedance; insertion loss; return loss; three dimensional coplanar waveguide transition; three dimensional electromagnetic simulations; through silicon via interconnect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5616331