DocumentCode
531477
Title
Novel broadband through silicon via interconnect for three dimensional CPW transition
Author
Cho, Young Seek ; Franklin, Rhonda R.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
fYear
2010
fDate
28-30 Sept. 2010
Firstpage
113
Lastpage
116
Abstract
A novel broadband through silicon via (TSV) interconnect is proposed for three dimensional coplanar waveguide (CPW) transition. Simple truncation of CPW ground plane in the transition region to the via size improves return and insertion loss of the three dimensional CPW transition. The characteristic impedance in the TSV interconnect is evaluated and optimum position of GND via hole is found by three dimensional electromagnetic simulations. Performance of the back-to-back novel TSV interconnect is characterized by simulations and measurements. The return loss of the novel TSV interconnect is below 20 dB over 88 % of a 50 GHz bandwidth. The return loss is improved by 10 dB and the insertion loss is well behaved response up to 25 GHz and better than 0.2 dB/mm across the 50 GHz band.
Keywords
coplanar waveguides; integrated circuit interconnections; three-dimensional integrated circuits; CPW ground plane; CPW transition; GND; back-to-back novel TSV interconnect; characteristic impedance; insertion loss; return loss; three dimensional coplanar waveguide transition; three dimensional electromagnetic simulations; through silicon via interconnect;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7232-1
Type
conf
Filename
5616331
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