DocumentCode :
531514
Title :
Theoretical and experimental comparison of Class F vs.Class F−1 PAs
Author :
Cipriani, Elisa ; Colantonio, Paolo ; Giannini, Franco ; Giofrè, Rocco
Author_Institution :
Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
1670
Lastpage :
1673
Abstract :
In this contribution, a comparison between Class F and the so called inverse Class F (Class F-1) power amplifiers is faced. A theoretical comparison is performed presenting a different approach to study the Class F-1 mode. In particular, the strong dependence of the Class F-1 behaviour upon the shape of the driving signal is highlighted. The experimental evaluation is figured out designing two GaAs monolithic Class F and Class F-1 power amplifiers at X-Band frequency, using the same process foundry and active devices. The achieved results are in agreement with the theoretical expected ones, showing an increase of 0.4 dB output power (from 28.1 dBm to 28.5 dBm) and 8% peak efficiency (from 50% to 54%) for Class F-1 mode with respect to the Class F one.
Keywords :
III-V semiconductors; gallium arsenide; microwave power amplifiers; GaAs; GaAs monolithic power amplifiers; X-band frequency; class F-1 power amplifier; inverse class F power amplifier; Class F; Class F−1; GaAs; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616394
Link To Document :
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