• DocumentCode
    531514
  • Title

    Theoretical and experimental comparison of Class F vs.Class F−1 PAs

  • Author

    Cipriani, Elisa ; Colantonio, Paolo ; Giannini, Franco ; Giofrè, Rocco

  • Author_Institution
    Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
  • fYear
    2010
  • fDate
    28-30 Sept. 2010
  • Firstpage
    1670
  • Lastpage
    1673
  • Abstract
    In this contribution, a comparison between Class F and the so called inverse Class F (Class F-1) power amplifiers is faced. A theoretical comparison is performed presenting a different approach to study the Class F-1 mode. In particular, the strong dependence of the Class F-1 behaviour upon the shape of the driving signal is highlighted. The experimental evaluation is figured out designing two GaAs monolithic Class F and Class F-1 power amplifiers at X-Band frequency, using the same process foundry and active devices. The achieved results are in agreement with the theoretical expected ones, showing an increase of 0.4 dB output power (from 28.1 dBm to 28.5 dBm) and 8% peak efficiency (from 50% to 54%) for Class F-1 mode with respect to the Class F one.
  • Keywords
    III-V semiconductors; gallium arsenide; microwave power amplifiers; GaAs; GaAs monolithic power amplifiers; X-band frequency; class F-1 power amplifier; inverse class F power amplifier; Class F; Class F−1; GaAs; power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5616394