DocumentCode
531514
Title
Theoretical and experimental comparison of Class F vs.Class F−1 PAs
Author
Cipriani, Elisa ; Colantonio, Paolo ; Giannini, Franco ; Giofrè, Rocco
Author_Institution
Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
fYear
2010
fDate
28-30 Sept. 2010
Firstpage
1670
Lastpage
1673
Abstract
In this contribution, a comparison between Class F and the so called inverse Class F (Class F-1) power amplifiers is faced. A theoretical comparison is performed presenting a different approach to study the Class F-1 mode. In particular, the strong dependence of the Class F-1 behaviour upon the shape of the driving signal is highlighted. The experimental evaluation is figured out designing two GaAs monolithic Class F and Class F-1 power amplifiers at X-Band frequency, using the same process foundry and active devices. The achieved results are in agreement with the theoretical expected ones, showing an increase of 0.4 dB output power (from 28.1 dBm to 28.5 dBm) and 8% peak efficiency (from 50% to 54%) for Class F-1 mode with respect to the Class F one.
Keywords
III-V semiconductors; gallium arsenide; microwave power amplifiers; GaAs; GaAs monolithic power amplifiers; X-band frequency; class F-1 power amplifier; inverse class F power amplifier; Class F; Class F−1; GaAs; power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7232-1
Type
conf
Filename
5616394
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