Title :
An integrated C-Band SiGe variable gain amplifier and reflected type phase shifter for phased array T/R modules
Author :
Hettak, K. ; Morin, G.A.
Author_Institution :
Commun. Res. Centre Canada, Ottawa, ON, Canada
Abstract :
A C-Band SiGe BiCMOS variable gain cascode amplifier (VGA) and reflection type phase shifter (RTPS) have been developed as a monolithic microwave integrated circuit (MMIC) with 45-dB gain control and 240° phase control with a SiGe varactor tuning range (Cmax/Cmin) of only 2.23. The proposed VGA combines the functionality of an amplifier and an attenuator. The RTPS uses a transformed single resonated varactor load and consumes zero DC power. The chip is 1.7 mm2, operates with a low bias voltage, is designed for C-band phased array T/R modules, and is fabricated using a commercial 0.35 μm SiGe BiCMOS process.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; MMIC phase shifters; semiconductor materials; varactors; C-band SiGe BiCMOS variable gain cascode amplifier; SiGe; SiGe varactor; gain 45 dB; integrated C-band SiGe variable gain amplifier; monolithic microwave integrated circuit; phased array T/R modules; reflected type phase shifter; reflection type phase shifter; size 0.35 mum;
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
