A polar modulated tri-band power amplifier using flexible substrate based MEMS switches

Author

Lai, Chung-Min ; Chao, Tzu-Yuan ; Tsou, Wen-An ; Chou, Mei-Fen ; Cheng, Yu-Ting ; Wen, Kuei-Ann

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

28-30 Sept. 2010

Firstpage

998

Lastpage

1001

Abstract

In this work, the phase compensation techniques by means of self-biasing control and an additional tuning capacitor for polar modulated tri-band Class-E power amplifier is proposed. The tri-band power amplifier operating at 2.3~2.7/3.3~3.8/5.1~5.8 GHz for WLAN and WiMAX applications adjusts low loss Micro-Electro-Mechanical-Systems (MEMS) switches to select the matching networks. The improvement of phase distortion and system relative constellation error (RCE) is 36.4° and 8.9dB, respectively. Simulation results shows that the maximum power-added efficiency (PAE) of 34.9%, drain efficiency of 37.3%, and output power of 18.8dBm from 2.8V supply can be achieved in 0.18μm CMOS Technology.

Keywords

CMOS analogue integrated circuits; distortion; microswitches; power amplifiers; substrates; CMOS technology; MEMS switches; PAE; RCE; class-E power amplifier; flexible substrate; maximum power-added efficiency; micro-electro-mechanical-system; phase compensation technique; phase distortion; polar modulated triband power amplifier; self-biasing control; size 0.18 micron; system relative constellation error; tuning capacitor; voltage 2.8 V;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7232-1

Type

conf

Filename

5616459