• DocumentCode
    531561
  • Title

    Vertical coaxial transitions for MM-waves 3D integration technologies

  • Author

    Crunelle, Romain ; Seok, Seonho ; Kim, Janggil ; Fryziel, Michel ; Rolland, Nathalie ; Cathelin, Andreia ; Rolland, Paul-Alain

  • Author_Institution
    IEMN, USTL, Villeneuve d´´Ascq, France
  • fYear
    2010
  • fDate
    28-30 Sept. 2010
  • Firstpage
    101
  • Lastpage
    104
  • Abstract
    Heterogeneous integration of many technologies in a 3D chip to build a complex system is a promising concept. The purpose of this paper is to present a new approach to create interlevel transitions for millimeter wave systems, using sensors, ICs, active devices and other parts, all integrated with a System in Package (SiP) technology. One of the issues with this approach is to develop low loss vertical interconnections for millimeter waves. We suggest Au/BCB micro-coaxial technology matching with interconnections in multilevel structures using lossy material (for example Si). Simulations results of a microstrip / coaxial transition / microstrip present transmission loss lower than 0.1 dB and reflection loss better than -15 dB until 80 GHz. The technological feasibility of theses transitions has been demonstrated and structures are being manufactured.
  • Keywords
    elemental semiconductors; gold; microstrip transitions; millimetre wave integrated circuits; silicon; system-in-package; 3D chip; Au; MM-waves 3D integration technologies; Si; heterogeneous integration; interlevel transitions; microcoaxial technology; microstrip; millimeter wave systems; multilevel structures; reflection loss; system-in-package; transmission loss; vertical coaxial transitions; vertical interconnections;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5616471