DocumentCode
531591
Title
A single bias 20W S-band HPA for radar applications
Author
Bettidi, A. ; Cetronio, A. ; Lavanga, S. ; Nanni, A.
Author_Institution
Eng. Div., SELEX Sist. Integrati S.p.A., Rome, Italy
fYear
2010
fDate
28-30 Sept. 2010
Firstpage
1639
Lastpage
1642
Abstract
The development of a single bias S-band MMIC HPA designed for radar T/R module applications is reported. The chip was fabricated with a low-cost 0.5μm GaAs PHEMT process and is composed of two stages, with a final stage of 29 mm gate-width periphery. The MMIC power amplifier is designed by using a zero gate bias configuration and therefore is attractive due to the size and cost reduction. In the frequency bandwidth 2.4-3.6GHz, the HPA biased at Vd=10V delivers an output power of 20W @ 4dB of gain compression, with an associated PAE of circa 28%.
Keywords
MMIC amplifiers; gallium compounds; high electron mobility transistors; phased array radar; power amplifiers; GaAs; GaAs PHEMT; MMIC power amplifier; bandwidth 2.4 GHz to 3.6 GHz; power 20 W; radar T/R module application; single bias S-band MMIC HPA; size 0.5 micron; zero gate bias configuration; MMICs; phased array radar; power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7232-1
Type
conf
Filename
5616531
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