DocumentCode
531634
Title
Switchable FBAR based on paraelectric films
Author
Mikhailov, A. ; Prudan, A. ; Ptashnik, S. ; Samoilova, T. ; Kozyrev, A.
Author_Institution
Dept. of Electron., St. Petersburg State Electrotech. Univ. (LETI), St. Petersburg, Russia
fYear
2010
fDate
28-30 Sept. 2010
Firstpage
791
Lastpage
794
Abstract
In present paper the calculation of eigen acoustic modes of a multilayer microwave capacitor structure with thin ferroelectric films in a paraelectric state is carried out. For the estimation of the efficiency of bulk acoustic waves excitation by ferroelectric films the system of electromechanical equations is solved and a spatial distribution of mechanical displacements in the structure is presented. Finally, the switchability of eigen acoustic modes is shown and the novel switchable film bulk acoustic resonator (FBAR) is discussed.
Keywords
acoustic resonators; bulk acoustic wave devices; capacitors; ferroelectric thin films; microwave devices; multilayers; bulk acoustic waves excitation; eigen acoustic mode; electromechanical equation; mechanical displacement; multilayer microwave capacitor structure; paraelectric film; spatial distribution; switchable FBAR; switchable film bulk acoustic resonator; thin ferroelectric film;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7232-1
Type
conf
Filename
5616603
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