• DocumentCode
    531676
  • Title

    Evidence of successive Fowler-Nordheim and Frenkel-Poole conductions in Si3N4 based RF-MEMS capacitive switches

  • Author

    Mardivirin, David ; Courrèges, Stanis ; Crunteanu, Aurelian ; Pothier, Arnaud ; Blondy, Pierre ; Coccetti, Fabio ; Plana, Robert

  • Author_Institution
    CNRS, Univ. de Limoges, Albert Thomas, France
  • fYear
    2010
  • fDate
    28-30 Sept. 2010
  • Firstpage
    513
  • Lastpage
    516
  • Abstract
    We studied the dielectric charging in RF-MEMS based on Si3N4 dielectric layers, deposited by PECVD. The component is a 79 fF to 646 fF capacitive switch made with two series fixed and MEMS capacitors. Charging is investigated and modeled in order to extract the specific conduction laws. We used a two time constants charging model, which can be identified as successive Fowler-Nordheim and Frenkel-Poole conductions occuring in RF-MEMS devices.
  • Keywords
    Poole-Frenkel effect; capacitor switching; dielectric thin films; microswitches; plasma CVD coatings; semiconductor device models; silicon compounds; Fowler-Nordheim conduction; Frenkel-Poole conduction; MEMS capacitors; PECVD; RF-MEMS capacitive switches; Si3N4; conduction laws; dielectric charging; dielectric layers; plasma enhanced chemical vapor deposition; radiofrequency microelectromechanical systems; series fixed capacitors; time constants charging model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5616658
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=531676