A 3.1–4.8 GHz ultra wideband low noise amplifier with robust full ESD protection in CMOS

Author

Wang, Xin ; Qin, B. ; Fan, S. ; Tang, H. ; Fang, Q. ; Lin, L. ; Liu, J. ; He, J. ; Zhao, H. ; Wang, A. ; Zhao, B.

Author_Institution

Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA

Volume

1

fYear

2010

fDate

20-23 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

A 3.1-4.8GHz two-stage LNA for Group-1 UWB applications featuring current reuse, resistive feedback, complete and high ESD protection design is reported. ESD-RFIC co-design technique was used to ensure whole-chip optimization. The design is implemented in a foundry 0.18μm RFCMOS. Measurement shows a gain of 13.2dB/14.0dB, excellent input reflection of -13.4dB/-17.5dB, noise figure (NF) of 5.11dB/4.79dB for LNA with/without ESD respectively, and best reported ESD protection level of >7.65kV at I/O and >15kV for supply lines.

Keywords

CMOS integrated circuits; electrostatic discharge; low noise amplifiers; microwave amplifiers; microwave integrated circuits; LNA; RFCMOS; RFIC codesign technique; current reuse; frequency 3.1 GHz to 4.8 GHz; gain 13.2 dB; gain 14 dB; group-1 UWB applications; noise figure 4.79 dB; noise figure 5.11 dB; robust full ESD protection; size 0.18 mum; ultrawideband low noise amplifier; CMOS integrated circuits; Delay; Electrostatic discharge; Gain; Noise measurement; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband (ICUWB), 2010 IEEE International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-5305-4

Electronic_ISBN

978-1-4244-5306-1

Type

conf

DOI

10.1109/ICUWB.2010.5616924

Filename

5616924