Title :
A 3.1–4.8 GHz ultra wideband low noise amplifier with robust full ESD protection in CMOS
Author :
Wang, Xin ; Qin, B. ; Fan, S. ; Tang, H. ; Fang, Q. ; Lin, L. ; Liu, J. ; He, J. ; Zhao, H. ; Wang, A. ; Zhao, B.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
Abstract :
A 3.1-4.8GHz two-stage LNA for Group-1 UWB applications featuring current reuse, resistive feedback, complete and high ESD protection design is reported. ESD-RFIC co-design technique was used to ensure whole-chip optimization. The design is implemented in a foundry 0.18μm RFCMOS. Measurement shows a gain of 13.2dB/14.0dB, excellent input reflection of -13.4dB/-17.5dB, noise figure (NF) of 5.11dB/4.79dB for LNA with/without ESD respectively, and best reported ESD protection level of >7.65kV at I/O and >15kV for supply lines.
Keywords :
CMOS integrated circuits; electrostatic discharge; low noise amplifiers; microwave amplifiers; microwave integrated circuits; LNA; RFCMOS; RFIC codesign technique; current reuse; frequency 3.1 GHz to 4.8 GHz; gain 13.2 dB; gain 14 dB; group-1 UWB applications; noise figure 4.79 dB; noise figure 5.11 dB; robust full ESD protection; size 0.18 mum; ultrawideband low noise amplifier; CMOS integrated circuits; Delay; Electrostatic discharge; Gain; Noise measurement; Transmission line measurements;
Conference_Titel :
Ultra-Wideband (ICUWB), 2010 IEEE International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-5305-4
Electronic_ISBN :
978-1-4244-5306-1
DOI :
10.1109/ICUWB.2010.5616924
