A low phase-noise SiGe Colpitts VCO with wide tuning range for UWB applications

Author

Esswein, Alexander ; Dehm-Andone, Gunther ; Weigel, Robert ; Aleksieieva, Anna ; Vossiek, Martin

Author_Institution

Inst. for Electron. Eng., Friedrich-Alexander Univ. of Erlangen-Nuremberg, Erlangen, Germany

fYear

2010

fDate

28-30 Sept. 2010

Firstpage

1599

Lastpage

1602

Abstract

An integrated differential common collector Colpitts VCO with a wide tuning range is presented in this paper. The circuit was designed and fabricated in the IHP Technologies SGB25V 250nm SiGe:C BiCMOS process. It provides a superior low phase noise performance of -115 dBc/Hz covering the frequency range of 6.7 to 8.7 GHz for UWB pulsed frequency modulated secondary radar application. An additional common collector output buffer was implemented as well. The circuit provides an overall output power of -10dBm single-ended with a power dissipation of 47mW including the on-chip buffer. This paper also shows the modifications and improvements done at the mmwave topology to reduce size and to improve the tuning range.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC oscillators; circuit tuning; semiconductor materials; ultra wideband technology; voltage-controlled oscillators; IHP Technologies SGB25V BiCMOS process; SiGe; UWB pulsed frequency modulated secondary radar application; frequency 6.7 GHz to 8.7 GHz; integrated differential common collector Colpitts VCO; phase-noise Colpitts VCO; size 250 nm; voltage-controlled oscillators; wide tuning range; Frequency modulation; Phase noise; Power generation; Topology; Tuning; Voltage-controlled oscillators; Analog integrated circuits; Phase noise; Ultra wideband; Voltage controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7232-1

Type

conf

Filename

5616949