Terahertz three-dimensional plasma resonances in InGaAs diodes: A hydrodynamic study

Author

Ziadé, Pierre ; Palermo, Christophe ; Marinchio, Hugues ; Laurent, Thibault ; Sabatini, Giulio ; Nouvel, Philippe ; Kallassy, Ziad ; Varani, Luca

Author_Institution

Lab. de Phys. Appl., Univ. Libanaise, Jdeideh, Lebanon

fYear

2010

fDate

28-30 Sept. 2010

Firstpage

1623

Lastpage

1626

Abstract

We investigate 3D plasma resonances in InGaAs n⁺ - n - n⁺ diodes undergoing an optical beating excitation at room temperature. For this sake, we calculate the electric field response in the middle of the diode regions by using a hydrodynamic approach coupled to a one-dimensional Poisson solver. The results show clearly the presence of three-dimensional plasma resonances in the terahertz frequency domain for the two region types. We also emphasize a strong coupling between the plasma modes. Finally, the influence of both geometry and doping profile on the amplitude and the frequency of the resonances is evaluated.

Keywords

III-V semiconductors; Poisson equation; doping profiles; gallium arsenide; indium compounds; plasma instability; semiconductor diodes; solid-state plasma; InGaAs; doping profile; electric field response; hydrodynamic study; n⁺-n-n⁺ diodes; one-dimensional Poisson solver; plasma modes; room temperature optical beating excitation; temperature 293 K to 298 K; terahertz three-dimensional plasma resonances; Doping; Indium gallium arsenide; Oscillators; Plasmas; Resonant frequency; Three dimensional displays; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7232-1

Type

conf

Filename

5616950