DocumentCode :
531743
Title :
Terahertz three-dimensional plasma resonances in InGaAs diodes: A hydrodynamic study
Author :
Ziadé, Pierre ; Palermo, Christophe ; Marinchio, Hugues ; Laurent, Thibault ; Sabatini, Giulio ; Nouvel, Philippe ; Kallassy, Ziad ; Varani, Luca
Author_Institution :
Lab. de Phys. Appl., Univ. Libanaise, Jdeideh, Lebanon
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
1623
Lastpage :
1626
Abstract :
We investigate 3D plasma resonances in InGaAs n+ - n - n+ diodes undergoing an optical beating excitation at room temperature. For this sake, we calculate the electric field response in the middle of the diode regions by using a hydrodynamic approach coupled to a one-dimensional Poisson solver. The results show clearly the presence of three-dimensional plasma resonances in the terahertz frequency domain for the two region types. We also emphasize a strong coupling between the plasma modes. Finally, the influence of both geometry and doping profile on the amplitude and the frequency of the resonances is evaluated.
Keywords :
III-V semiconductors; Poisson equation; doping profiles; gallium arsenide; indium compounds; plasma instability; semiconductor diodes; solid-state plasma; InGaAs; doping profile; electric field response; hydrodynamic study; n+-n-n+ diodes; one-dimensional Poisson solver; plasma modes; room temperature optical beating excitation; temperature 293 K to 298 K; terahertz three-dimensional plasma resonances; Doping; Indium gallium arsenide; Oscillators; Plasmas; Resonant frequency; Three dimensional displays; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616950
Link To Document :
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