A 72-114 GHz fully integrated frequency multiplier chain for astronomical applications in 0.15-µm mHEMT process

Author

Hung, Chi-Cheng ; Chiong, Chau-Ching ; Chen, Ping ; Tsai, Yi-Chien ; Tsai, Zuo-Min ; Wang, Huei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

fDate

28-30 Sept. 2010

Firstpage

81

Lastpage

84

Abstract

This paper demonstrates a fully integrated W-band frequency multiplier chain, which is implemented in 0.15-μm GaAs mHEMT process. The frequency multiplier chain includes a passive balanced doubler, a resistive feedback buffer amplifier, and an anti-parallel diode pair wideband tripler. It has a 6-dB bandwidth of 45% (72-114 GHz) with a peak conversion gain of -17.9 dB, and dc consumption of 120 mW. To the authors´ best knowledge, this is the first fully integrated frequency multiplier chain of W-band in commercial mHEMT process.

Keywords

feedback amplifiers; frequency multipliers; gallium compounds; high electron mobility transistors; radioastronomical techniques; GaAs; GaAs mHEMT process; W-band frequency multiplier chain; antiparallel diode pair wideband tripler; astronomical application; bandwidth 72 GHz to 114 GHz; frequency 72 GHz to 114 GHz; passive balanced doubler; power 120 mW; resistive feedback buffer amplifier; size 0.15 micron; Frequency measurement; Gain; Harmonic analysis; Impedance matching; Power harmonic filters; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7232-1

Type

conf

Filename

5616988