Title :
Integration of a-IGZO Thin-Film Transistor and Crystalline-Si Interdigitated Back Contact Photovoltaic Cell With 3D Stacking Structure as Self-Powered Solar Switch
Author :
Yen-Ming Juan ; Han-Ting Hsueh ; Shoou-Jinn Chang ; Chang, T.H. ; Lai, K.C. ; Cheng, T.C. ; Lin, Y.D. ; Chiu, C.J. ; Wen-Yin Weng
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this letter, a Ta2O5/a-IGZO thin film transistor (TFT) was directly stacked on a crystalline-Si interdigitated back contact (IBC) photovoltaic (PV) cell to create a self-powered solar switch. The a-IGZO TFT and IBC PV cell were integrated into a single chip without an external circuit. This device exhibits switching property induced by illumination. The results show that it can be switched even under a low solar illumination of 300 W/m2 due to the low threshold voltage of the a-IGZO TFT (0.25 V). The ON/OFF current contrast ratio was measured to be ~20 under 1-sun illumination. The fabrication process and characteristics of this device make it suitable and practicable for use as a self-powered solar switch.
Keywords :
electrical contacts; elemental semiconductors; gallium compounds; indium compounds; photovoltaic cells; silicon; solar cells; switches; thin film transistors; 3D stacking structure; IBC PV cell; InGaZnO; ON-OFF current contrast ratio; Si; TFT; interdigitated back contact photovoltaic cell; self-powered solar switch; solar illumination; switching property; thin-film transistor; voltage 0.25 V; Electrodes; Lighting; Logic gates; Stacking; Switches; Thin film transistors; Three-dimensional displays; Interdigitated back contact (IBC); a-IGZO; self-powered device;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2347039
