• DocumentCode
    533080
  • Title

    Triaxial accelerometer design based on meso-piezoresistive effect

  • Author

    Kun, Huang ; Tingdun Wen

  • Author_Institution
    Dept. of Phys., North Univ. of China, Taiyuan, China
  • Volume
    13
  • fYear
    2010
  • fDate
    22-24 Oct. 2010
  • Abstract
    With the theory of meso-piezoresistive effect, we design a high sensitivity piezoresistive triaxial accelerometer. A three-mass dual-beam geometric micro-structure cavity can be designed by using GaAs/AlAs/InGaAs RTS film as sensitive element. After theoretical analysis and calculation of the sensitivity of this accelerometer and having compared with conventional silicon micro-accelerometer, we know the piezoresistive sensitivity of the RTS film that possesses the meso-piezoresistive effect is higher than the ordinary bulk silicon material. Building a reasonable bridge circuit can enhance the output voltage signal, The design of the same geometric size double cantilever in three axes may achieve the equal precision measurement in any direction.
  • Keywords
    III-V semiconductors; accelerometers; aluminium compounds; gallium arsenide; indium compounds; microcavities; micromechanical devices; piezoresistive devices; GaAs-AlAs-InGaAs; meso-piezoresistive effect; piezoresistive sensitivity; three-mass dual-beam geometric micro-structure cavity; triaxial accelerometer design; Gallium arsenide; Molecular beam epitaxial growth; Piezoresistance; GaAs / AlAs / InGaAs; meso-piezoresistive effect; triaxial accelerometer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Application and System Modeling (ICCASM), 2010 International Conference on
  • Conference_Location
    Taiyuan
  • Print_ISBN
    978-1-4244-7235-2
  • Electronic_ISBN
    978-1-4244-7237-6
  • Type

    conf

  • DOI
    10.1109/ICCASM.2010.5622783
  • Filename
    5622783