DocumentCode
533080
Title
Triaxial accelerometer design based on meso-piezoresistive effect
Author
Kun, Huang ; Tingdun Wen
Author_Institution
Dept. of Phys., North Univ. of China, Taiyuan, China
Volume
13
fYear
2010
fDate
22-24 Oct. 2010
Abstract
With the theory of meso-piezoresistive effect, we design a high sensitivity piezoresistive triaxial accelerometer. A three-mass dual-beam geometric micro-structure cavity can be designed by using GaAs/AlAs/InGaAs RTS film as sensitive element. After theoretical analysis and calculation of the sensitivity of this accelerometer and having compared with conventional silicon micro-accelerometer, we know the piezoresistive sensitivity of the RTS film that possesses the meso-piezoresistive effect is higher than the ordinary bulk silicon material. Building a reasonable bridge circuit can enhance the output voltage signal, The design of the same geometric size double cantilever in three axes may achieve the equal precision measurement in any direction.
Keywords
III-V semiconductors; accelerometers; aluminium compounds; gallium arsenide; indium compounds; microcavities; micromechanical devices; piezoresistive devices; GaAs-AlAs-InGaAs; meso-piezoresistive effect; piezoresistive sensitivity; three-mass dual-beam geometric micro-structure cavity; triaxial accelerometer design; Gallium arsenide; Molecular beam epitaxial growth; Piezoresistance; GaAs / AlAs / InGaAs; meso-piezoresistive effect; triaxial accelerometer;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Application and System Modeling (ICCASM), 2010 International Conference on
Conference_Location
Taiyuan
Print_ISBN
978-1-4244-7235-2
Electronic_ISBN
978-1-4244-7237-6
Type
conf
DOI
10.1109/ICCASM.2010.5622783
Filename
5622783
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