Optimizing techniques for charge injection effect of pixels in CMOS image sensor

Author

Zheng, Ran ; Wei, Tingcun ; Gao, Deyuan ; Li, Feng ; Zeng, Huiming

Author_Institution

Embedded Syst. Integration Minist. of Educ., Eng. Res. Center, Xi´´an, China

Volume

10

fYear

2010

fDate

22-24 Oct. 2010

Abstract

Analysis on the charge injection effect of the pixels in CMOS image sensor is discussed and the optimizing techniques for the effect is proposed in this paper. The pixel consists of a Pinned-Diode and several MOS switches with large size, which causes severe charge injection during normal pixel operations. Analysis on the dynamic range of the Pinned- Diode (PD), node reset, exposure signal-reading aiming at charge injection effect is implemented, based on which, optimizing techniques for the effect by employing appropriate time sequence and suitable voltages/controlling signals are proposed. The dynamic range of PD is improved by 26% and the charge injection effect on FD (Floating-Diffusion) node is suppressed by 80%.

Keywords

CMOS image sensors; charge injection; p-i-n diodes; CMOS image sensor; MOS switch; charge injection effect; exposure signal-reading; floating-diffusion node; image pixels; node reset; optimizing techniques; pinned-diode switch; time sequence; Pixel; APS; CMOS image sensor; charge injection; pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Application and System Modeling (ICCASM), 2010 International Conference on

Conference_Location

Taiyuan

Print_ISBN

978-1-4244-7235-2

Electronic_ISBN

978-1-4244-7237-6

Type

conf

DOI

10.1109/ICCASM.2010.5622800

Filename

5622800