• DocumentCode
    533385
  • Title

    Anomalous ESD failures in NLDMOS during reverse recovery

  • Author

    Hirano, Tetsuro ; Hase, Mitsuo ; Ogura, Takashi ; Tanaka, Shuji ; Fujiwara, Shuji

  • Author_Institution
    SANYO Semicond. Co., Ltd., Gunma, Japan
  • fYear
    2010
  • fDate
    3-8 Oct. 2010
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Anomalous NLDMOS behavior under ESD stresses is investigated. Negative MM test results show failures at low stress voltage and local distributions of destruction spots. TCAD simulations clarified that the reverse recovery current during the MM stress causes parasitic NPN turn-on and effectively lowers the trigger voltage (Vt1).
  • Keywords
    MOS integrated circuits; electrostatic discharge; failure analysis; large scale integration; ESD failures; ESD stresses; LSI; TCAD simulations; anomalous NLDMOS behavior; negative MM test; reverse recovery current; trigger voltage; Doping; Electrostatic discharge; Integrated circuit modeling; Lattices; Semiconductor process modeling; Stress; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
  • Conference_Location
    Reno, NV
  • Print_ISBN
    978-1-58537-182-2
  • Electronic_ISBN
    978-1-58537-182-2
  • Type

    conf

  • Filename
    5623755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=533385