• DocumentCode
    533389
  • Title

    A new method to evaluate effectiveness of CDM ESD protection

  • Author

    Yuanzhong Zhou ; Hajjar, J.-J. ; Ellis, D.F. ; Olney, A.H. ; Liou, J.J.

  • Author_Institution
    Analog Devices Inc., Wilmington, MA, USA
  • fYear
    2010
  • fDate
    3-8 Oct. 2010
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    A new methodology for evaluating the effectiveness of CDM protection is presented. VFTLP measurements are performed on structures composed of an ESD protection device in parallel with a gate monitor device; a MOS transistor or inverter. Parametric shifts in threshold voltage, VTH, as well as drain saturation current, IDD, of the MOS monitor device are measured to continuously gauge the extent of the damage resulted from a CDM-like fast transient.
  • Keywords
    MOSFET; electrostatic discharge; invertors; transient analysis; transmission lines; CDM ESD protection device; CDM-like fast transient; MOS monitor device; MOS transistor; VFTLP measurements; drain saturation current; gate monitor device; inverter; parametric shifts; threshold voltage; Current measurement; Electrostatic discharge; Leakage current; Logic gates; MOS devices; Monitoring; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
  • Conference_Location
    Reno, NV
  • Print_ISBN
    978-1-58537-182-2
  • Type

    conf

  • Filename
    5623759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=533389