Title :
TCAD study of the impact of trigger element and topology on silicon controlled rectifier turn-on behavior
Author :
Bourgeat, Johan ; Entringer, Christophe ; Galy, Philippe ; Jezequel, Frank ; Bafleur, Marise
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
Silicon controlled rectifier (SCR) has a superior ESD performance in terms of power dissipation and saved area compared to classical MOSFET. In this paper, we present 3D TCAD simulations of SCR in CMOS 32nm node. This work focuses on the reduction of the triggering voltage due to the SCR turn-on.
Keywords :
CMOS integrated circuits; circuit CAD; technology CAD (electronics); thyristors; 3D TCAD simulations; CMOS node; ESD performance; MOSFET; power dissipation; silicon controlled rectifier turn-on behavior topology; size 32 nm; trigger element; triggering voltage reduction; Integrated circuit modeling; Logic gates; Resistance; Resistors; Stress; Thyristors; Trigger circuits;
Conference_Titel :
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location :
Reno, NV
Print_ISBN :
978-1-58537-182-2
Electronic_ISBN :
978-1-58537-182-2
