Title :
Metallization on the basis of binary and ternary alloys for submicron elements of MEMS RF-microswitches formation
Author :
Chemykh, A.G. ; Tymoshchyk, A.S.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Features of structure of aluminum metallization on the basis of binary and ternary alloys for submicron elements of MEMS formation are considered. It is shown, that use of ternary alloys Al+Si+Cu and Al+Si+Ho at temperature of a substrate 250-280°C leads to formation of the most fine-grained films of the metallization giving reproducible profiles of anodizing at formation of submicron elements of MEMS RF-microswitches.
Keywords :
aluminium alloys; copper alloys; holmium alloys; metallisation; microswitches; silicon alloys; Al-Si-Cu; Al-Si-Ho; MEMS RF-microswitches formation; aluminum metallization; binary alloys; fine-grained films; submicron elements; temperature 250 degC to 280 degC; ternary alloys; Aluminum; Films; Metallization; Micromechanical devices; Microswitches; Radio frequency;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632447
