High speed amplitude millimeter wave switches of inverse type

Author

Karushkin, N.F. ; Simonchouk, V.I. ; Malyshko, V.V. ; Orehovskiy, V.A.

Author_Institution

State Enterprise RI “Orion “, Kiev, Ukraine

fYear

2010

fDate

13-17 Sept. 2010

Firstpage

174

Lastpage

178

Abstract

The article concerns the results of analysis of frequency characteristics of fast amplitude switches of inverse type in the millimeter wave range with the use of the silicon diode p⁺-n-n⁺-structures mounted in a dielectric package. The dielectric package is considered in the form of the radial line with the distributed parameters which ensure transforming of input impedance of a transmission line to the diode structure switching terminals in order to realize a parallel resonance condition in a switch circuit in microwave power transmission mode. Requirements are determined for the diode parameters and construction providing realization of the optimum operating mode of the switch in a working band.

Keywords

dielectric materials; millimetre wave devices; semiconductor device packaging; semiconductor diodes; silicon; switches; Si; dielectric package; diode parameters; diode structure switching terminals; distributed parameters; fast amplitude switches; frequency characteristics; high speed amplitude millimeter wave switches; inverse type; microwave power transmission mode; millimeter wave range; parallel resonance condition; radial line; silicon diode p-n-n-structures; switch circuit; transmission line; Blanking; Dielectrics; Frequency dependence; Modulation; Propagation losses; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-7184-3

Type

conf

DOI

10.1109/CRMICO.2010.5632529

Filename

5632529