Title :
An experimental recovery of GaAs and GaN PHEMT linear equivalent circuits and noise models
Author :
Krutov, A.V. ; Rebrov, A.S.
Author_Institution :
FSUE RPC "Istok", Fryazino, Russia
Abstract :
In the present article an experimental recovery of GaAs and GaN PHEMT linear equivalent circuit and noise model are presented. The linear equivalent circuit and noise mode for two types of PHEMT manufactured by FSUE RPC “Istok” (molecular beam epitaxy structure on GaAs and GaN) are recovered.
Keywords :
III-V semiconductors; equivalent circuits; high electron mobility transistors; molecular beam epitaxial growth; FSUE RPC Istok; GaAs; GaN; PHEMT; high electron mobility transistor; linear equivalent circuits; molecular beam epitaxy structure; noise models; pseudomorphic HEMT; Equivalent circuits; Facsimile; Gallium arsenide; Gallium nitride; Integrated circuit modeling; Noise; PHEMTs;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632530
