DocumentCode
533766
Title
An experimental recovery of GaAs and GaN PHEMT linear equivalent circuits and noise models
Author
Krutov, A.V. ; Rebrov, A.S.
Author_Institution
FSUE RPC "Istok", Fryazino, Russia
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
214
Lastpage
215
Abstract
In the present article an experimental recovery of GaAs and GaN PHEMT linear equivalent circuit and noise model are presented. The linear equivalent circuit and noise mode for two types of PHEMT manufactured by FSUE RPC “Istok” (molecular beam epitaxy structure on GaAs and GaN) are recovered.
Keywords
III-V semiconductors; equivalent circuits; high electron mobility transistors; molecular beam epitaxial growth; FSUE RPC Istok; GaAs; GaN; PHEMT; high electron mobility transistor; linear equivalent circuits; molecular beam epitaxy structure; noise models; pseudomorphic HEMT; Equivalent circuits; Facsimile; Gallium arsenide; Gallium nitride; Integrated circuit modeling; Noise; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632530
Filename
5632530
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