• DocumentCode
    533773
  • Title

    Standard technologies for microvawe semiconductor electronics based on III-nitrides

  • Author

    Krasovitskiy, D.M. ; Katsavets, N.I. ; Kokin, S.V. ; Filaretov, A.G. ; Chaliy, V.P.

  • Author_Institution
    JSC Svetlana-Rost, St. Petersburg, Russia
  • fYear
    2010
  • fDate
    13-17 Sept. 2010
  • Firstpage
    741
  • Lastpage
    742
  • Abstract
    The 0.8 mkm AlGaN based process is realized to create power transistors suitable for design of microwave amplifiers with working frequencies up to C-band. Newly developed 0.5 mkm- process is expected to extend technology applicability towards X-band RF-devices.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave amplifiers; power transistors; AlGaN; III-nitrides; X-band RF-devices; microvawe semiconductor electronics; microwave amplifier design; power transistors; Aluminum gallium nitride; Foundries; Gallium nitride; Logic gates; Process control; Silicon carbide; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-7184-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2010.5632544
  • Filename
    5632544
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=533773