DocumentCode :
533794
Title :
Method of microwave scanning tomography of electrical properties of semiconductors
Author :
Melnik, I.S. ; Gordienko, O.J.
Author_Institution :
MES Ukraine, Kharkov Nat. Univ. of Radioelectron., Kharkov, Ukraine
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
721
Lastpage :
722
Abstract :
The technique of microwave diagnostics of semiconductors with arbitrary distribution of electrical properties in depth has been developed. It has been proposed to conduct the scanning of the value of the air gap between the resonator sensor and the surface of the semiconductor. The one-dimensional reconstruction algorithm of distribution of electrical properties of the semi-conductor has been generated. It consists of solution of the integral equation for the intermediate function, which completely characterizes the properties of the object, and step-by-step algorithm for solution of the ill-posed inverse problem.
Keywords :
air gaps; electric properties; integral equations; microwave measurement; semiconductors; tomography; air gap; electrical properties; ill-posed inverse problem; integral equation; microwave diagnostics; microwave scanning tomography; one-dimensional reconstruction algorithm; resonator sensor; semiconductors; Electronic mail; Inverse problems; Mathematical model; Microwave circuits; Microwave imaging; Tomography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632574
Filename :
5632574
Link To Document :
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