• DocumentCode
    533932
  • Title

    Dielectric characteristics of thin film capacitors based on anodized Al/Ta layers

  • Author

    Pligovka, A.N. ; Luferov, A.N. ; Nosik, R.F. ; Mozalev, A.M.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2010
  • fDate
    13-17 Sept. 2010
  • Firstpage
    880
  • Lastpage
    881
  • Abstract
    MIM thin film capacitors have been developed with three types of nanostructured thin film dielectrics made from the anodic oxides of Al/Ta metal bilayer. High breakdown voltages, low leakage currents and dielectric losses have been achieved.
  • Keywords
    MIM devices; aluminium; dielectric losses; dielectric materials; electric breakdown; leakage currents; tantalum; thin film capacitors; Al-Ta; MIM thin film capacitors; anodic oxides; dielectric losses; high breakdown voltages; low leakage currents; nanostructured thin film dielectrics; Annealing; Capacitors; Dielectric losses; Electronic mail; Leakage current; Materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-7184-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2010.5632734
  • Filename
    5632734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=533932